A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
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5 results for B. Robinson
Soft x-ray photoemission study of downstream plasma enhanced chemical vapor deposited SiO2
- Bennett Robinson
- F.R. McFeely
- 1989
- Journal of Applied Physics
Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide
- W.L. Warren
- P. Lenahan
- et al.
- 1988
- Applied Physics Letters
Calorimetry in thin film processing
- S. Shivashankar
- B. Robinson
- 1986
- JVSTA
Bimolecular processes in a low-density oxygen discharge
- D.D. Awschalom
- S. Shivashankar
- et al.
- 1984
- Physical Review A