Lattice compression from conduction electrons in heavily doped Si:as
- G.S. Cargill III
- J. Angilello III
- et al.
- 1988
- Physical Review Letters
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10 results for K.L. Kavanagh
Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface
- P.E. Batson
- K.L. Kavanagh
- et al.
- 1986
- Physical Review Letters
Fermi-level pinning by misfit dislocations at GaAs interfaces
- J. Woodall
- G.D. Pettit
- et al.
- 1983
- Physical Review Letters
The Polycrystalline-Si Contact to GaAs
- P.D. Kirchner
- J.M. Woodall
- et al.
- 2019
- JES
Lattice strain from substitutional Ga and from holes in heavily doped Si:Ga
- K.L. Kavanagh
- G.S. Cargill III
- 1992
- Physical Review B
Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa 1-xAs (0≤x≤0.3)
- E.D. Marshall
- L.S. Yu
- et al.
- 1989
- Applied Physics Letters
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
- K.L. Kavanagh
- M.A. Capano
- et al.
- 1988
- Journal of Applied Physics
Local bonding and electronic structure obtained from electron energy loss scattering
- P.E. Batson
- K.L. Kavanagh
- et al.
- 1987
- Ultramicroscopy
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
- E.D. Marshall
- B. Zhang
- et al.
- 1987
- Journal of Applied Physics
Silicon diffusion at polycrystalline-Si/GaAs interfaces
- K.L. Kavanagh
- J.W. Mayer
- et al.
- 1985
- Applied Physics Letters