Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
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3 results for L.A. Nesbit
A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
Effects of deposition methods on the temperature-dependent resistivity of tunasten films
- L. Krusin-Elbaum
- K.Y. Ahn
- et al.
- 1986
- JVSTA