Theory of interband auger recombination in n-type siliconD.B. LaksG.F. Neumarket al.1988Physical Review Letters
Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cyclesR. SauerS. Nilssonet al.1992Physical Review B