Comparison between Si(100) and Si(111) in the reaction with oxygen at high temperaturesUlrich MemmertYu Ming L1991Surface Science
Pyrolysis of trimethylgallium on GaAs(100) surfacesUlrich MemmertMing L. Yu1990Applied Physics Letters
Influence of the 7×7-1×1 phase transition on the sticking of oxygen on Si(111)Ulrich MemmertMing L. Yu1989Chemical Physics Letters
Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)Ming L. YuUlrich Memmertet al.1989Applied Physics Letters