Properties of diamond structure SnGe films grown by molecular beam epitaxy
- Alex Harwit
- P.R. Pukite
- et al.
- 1990
- Thin Solid Films
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7 results for P.R. Pukite
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
Ion beam enhanced diffusion of B during Si molecular beam epitaxy
- P.R. Pukite
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters
Molecular beam epitaxy of metastable, diamond structure Sn xGe1-x alloys
- P.R. Pukite
- Alex Harwit
- et al.
- 1989
- Applied Physics Letters
Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100)
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1989
- Physical Review B
Growth of abrupt Ge layers in Si (100)
- Subramanian S. Iyer
- P.R. Pukite
- et al.
- 1989
- Journal of Crystal Growth
On the origin of RHEED intensity oscillations
- G.S. Petrich
- P.R. Pukite
- et al.
- 1989
- Journal of Crystal Growth