High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fTClement WannFariborz Assaderaghiet al.1997IEEE Electron Device Letters
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate OxideYuan TaurS. Cohenet al.1993IEEE Electron Device Letters
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectricsK. RimE. Gusevet al.2002VLSI Technology 2002
Suppression of the SOI floating-body effects by linked-body device structureW. ChenY. Tauret al.1996VLSI Technology 1996
Straddle gate transistors: High Ion/Ioff transistors at short gate lengthsS. TiwariJ.J. Welseret al.1999DRC 1999