InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
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5 results for Russell C. Gee
Base recombination in high performance InGaAs/InP HBTs
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- Device Research Conference 1993
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters