CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)E. HuangM. Ohet al.2009ADMETA 2009
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositionsC.-C. YangD. Edelsteinet al.2004ADMETA 2004
Extendibility study of PVD Cu seedlayers in 90nm-groundrule lines and viasA. SimonS.B. Lawet al.2004AMC 2004