Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integrationTakeshi NogamiChih-Chao Yanget al.2008ADMETA 2008
Robust and low cost copper contact application for low power device at 32 nm-node and beyondAtsunobu IsobayashiJames J. Kellyet al.2009IITC 2009