Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters
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4 results for M.L. Green
Annealing behavior of atomic layer deposited HfO2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering
- M.L. Green
- A.J. Allen
- et al.
- 2009
- Journal of Applied Physics
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- M.L. Green
- E. Gusev
- et al.
- 2001
- Journal of Applied Physics
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
- H.C. Lu
- E. Gusev
- et al.
- 2000
- Journal of Applied Physics