Effect of surface nitridation on the Ge/HfO2 interface
- R. Garg
- D. Misra
- et al.
- 2005
- ECS Meeting 2005
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3 results for D. Misra
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering
Effect of Ge surface nitridation on the Ge/HfO2/Al MOS devices
- Reenu Garg
- Durga Misra
- et al.
- 2006
- IEEE T-DMR