Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
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90 results for Meikei Ieong
Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Assembly technology for three dimensional integrated circuits
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- VMIC 2005
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers
- Qiqing Ouyang
- Meikei Ieong
- et al.
- 2005
- VLSI Technology 2005
A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Ultra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
- B.P. Linder
- et al.
- 2005
- VLSI-TSA 2005
On the scalability and carrier transport of advanced CMOS devices
- Meikei Ieong
- Leland Chang
- et al.
- 2005
- ICICDT 2005