Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substratesHaizhou YinZ. Renet al.2006ICSICT 2006
Patterning strategies for gate level tip-tip distance reduction in SRAM cell for 45nm and beyondHaoren ZhuangHelen Wanget al.2007ISTC 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. NarayananV.K. Paruchuriet al.2006VLSI Technology 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETsK.-L. LeeM.M. Franket al.2006VLSI Technology 2006
Tunable Workfunction for Fully Silicied Gates (FUSI) and Proposed MechanismsY.-H. KimC. Cabral Jr.et al.2006VLSI-TSA 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientationsM. YangK.K. Chanet al.2006VLSI Technology 2006
Investigation of FinFET devices for 32nm technologies and beyondH. ShangL. Changet al.2006VLSI Technology 2006
Lower resistance scaled metal contacts to silicide for advanced CMOSA. TopolC. Sherawet al.2006VLSI Technology 2006