High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copperB. GreeneQ. Lianget al.2009VLSI Technology 2009
Challenges and opportunities for high performance 32 nm CMOS technologyJ. SleightI. Laueret al.2006IEDM 2006
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturingH.S. YangR. Maliket al.2004IEDM 2004
Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrateJin CaiMahender Kumaret al.2003BCTM 2003
Fully-depleted-collector polysilicon-emitter SiGe-base vertical bipolar transistor on SOIJin CaiA. Ajmeraet al.2002VLSI Technology 2002