Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
- D. Singh
- J. Sleight
- et al.
- 2005
- IEDM 2005
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10 results for J. Hergenrother
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Protecting big blue from rogue subatomic particles
- Ethan H. Cannon
- A.J. KleinOsowski
- et al.
- 2007
- ICICDT 2007
Stable SRAM cell design for the 32 nm node and beyond
- Leland Chang
- David M. Fried
- et al.
- 2005
- VLSI Technology 2005
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Looking into the crystal ball: Future device learning using hybrid E-beam and optical lithography
- S.E. Steen
- S.J. McNab
- et al.
- 2005
- Microlithography 2005
Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes
- Steven Steen
- Sharee J. McNab
- et al.
- 2006
- Microelectronic Engineering
Discrete energy levels and superconductivity in nanometer-scale Al particles
- M. Tinkham
- D.C. Ralph
- et al.
- 1996
- Czechoslovak Journal of Physics