A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology
- A. Sayag
- S. Levin
- et al.
- 2008
- RFIC 2008
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7 results for D. Ritter
One stage 24 GHz LNA with 6.4dB gain and 2.8 dB NF using 0.18 μm CMOS technology and slow wave transmission lines
- A. Sayag
- S. Levin
- et al.
- 2008
- COMCAS 2008
Compact modeling and comparative analysis of silicon-chip slow-wave transmission lines with slotted bottom metal ground planes
- Avraham Sayag
- Dan Ritter
- et al.
- 2009
- IEEE T-MTT
Base charge dynamics of abrupt base-emitter junction HBTs and its representation in transistor models
- B. Sheinman
- D. Ritter
- 2007
- IEEE Transactions on Electron Devices
Optical constants of In 0.53Ga 0.47As/InP: Experiment and modeling
- Martín Muñoz
- Todd M. Holden
- et al.
- 2002
- Journal of Applied Physics
Burstein-Moss shift of n-doped (formula presented)
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP
Burstein-Moss shift of n-doped In0.53Ga0.47As/inp
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP