Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
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96 results for Barry P. Linder
Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress
- Keith A. Jenkins
- Barry P. Linder
- 2015
- IEEE Electron Device Letters
Superior PBTI reliability for SOI FinFET technologies and its physical understanding
- Miaomiao Wang
- Ramachandran Muralidhar
- et al.
- 2013
- IEEE Electron Device Letters
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
A model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
Long Term NBTI Relaxation under AC and DC Biased Stress and Recovery
- Elnatan Mataev
- James Stathis
- et al.
- 2019
- IRPS 2019