Fundamental power and frequency limits of deeply-scaled CMOS for RF power applications
- Jörg Scholvin
- David R. Greenberg
- et al.
- 2006
- IEDM 2006
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7 results for Jörg Scholvin
Performance and limitations of 65 nm CMOS for integrated RF power applications
- Jörg Scholvin
- David R. Greenberg
- et al.
- 2005
- IEDM 2005
RF power potential of 90 nm CMOS: Device options, performance, and reliability
- Jörg Scholvin
- David R. Greenberg
- et al.
- 2004
- IEDM 2004
Sub-40 nm SOI V-groove n-MOSFETs
- Joerg Appenzeller
- R. Martel
- et al.
- 2002
- IEEE Electron Device Letters
Sub-40nm V-groove MOSFETs
- J. Appenzeller
- R. Martel
- et al.
- 2001
- DRC 2001
Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors
- J. Knoch
- J. Appenzeller
- et al.
- 2001
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A Faraday cage isolation structure for substrate crosstalk suppression
- Joyce H. Wu
- Jörg Scholvin
- et al.
- 2001
- IEEE MWCL