Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
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7 results for J.A. Felix
Radiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric Stacks
- J.A. Felix
- M.R. Shaneyfelt
- et al.
- 2003
- IEEE TNS
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS
Charge trapping and annealing in high-k gate dielectrics
- James A. Felix
- Marty R. Shaneyfelt
- et al.
- 2004
- IEEE TNS
Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics
- X.J. Zhou
- L. Tsetseris
- et al.
- 2004
- Applied Physics Letters
Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
- J.A. Felix
- J.R. Schwank
- et al.
- 2004
- Microelectronics Reliability
Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks
- H.D. Xiong
- D.M. Fleetwood
- et al.
- 2003
- Applied Physics Letters