Structural origin of resistance drift in amorphous GeTe
- Federico Zipoli
- Daniel Krebs
- et al.
- 2016
- Physical Review B
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21 results for Daniel Krebs
Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
- Manuel Le Gallo
- A. Athmanathan
- et al.
- 2016
- Journal of Applied Physics
Subthreshold electrical transport in amorphous phase-change materials
- Manuel Le Gallo
- Matthias Kaes
- et al.
- 2015
- New Journal of Physics
Changes in electrical transport and density of states of phase change materials upon resistance drift
- Daniel Krebs
- Tobias Bachmann
- et al.
- 2014
- New Journal of Physics
Defects in amorphous phase-change materials
- Jennifer Luckas
- Daniel Krebs
- et al.
- 2013
- Journal of Materials Research
The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
- J.L.M. Oosthoek
- D. Krebs
- et al.
- 2012
- Journal of Applied Physics
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
- Daniel Krebs
- Rüdiger M. Schmidt
- et al.
- 2012
- Journal of Non-Crystalline Solids
Characterization of phase change memory materials using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Journal of Applied Physics
Threshold field of phase change memory materials measured using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Applied Physics Letters
Phase-change random access memory: A scalable technology
- Simone Raoux
- Geoffrey W. Burr
- et al.
- 2008
- IBM J. Res. Dev