Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- Tiezhong Ma
- Stephen A. Campbell
- et al.
- 2001
- IEEE Transactions on Electron Devices
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Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
- Ryan C. Smith
- Noel Hoilien
- et al.
- 2000
- JES