Quantitative experimental determination of the effect of dislocation - dislocation interactions on strain relaxation in lattice mismatched heterostructuresE.A. StachR. Hullet al.1998MRS Fall Meeting 1998
Precision placement of heteroepitaxial semiconductor quantum dotsR. HullJ. Grayet al.2003Materials Science and Engineering: B
In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructuresE.A. StachfR. Hullet al.2000Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructuresE.A. StachR. Hullet al.1998Journal of Applied Physics