Novel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond
- P.S. Parkinson
- K. Settlemyer
- et al.
- 2003
- VLSI-TSA 2003
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Time-dependent dielectric breakdown evaluation of deep trench capacitor with sidewall hemispherical, polysilicon grains for gigabit DRAM technology
- Fen Chen
- Porshia Parkinson
- et al.
- 2002
- IIRW 2002