First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
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Spin transmission through NiO in Pt/NiO/NM/Py heterostructure
- Biswajit Sahoo
- Christopher Safranski
- et al.
- 2024
- MMM 2024