Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
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8 results for Jordi Suñe
Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
Recent advances in dielectric breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Sune
- 2013
- IIRW 2013
Generalized successive failure methodology for non-Weibull distributions and its applications to SiO 2 or high-k/SiO 2 bilayer dielectrics and extrinsic failure mode
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IRPS 2012
Post-breakdown statistics and acceleration characteristics in high-K dielectric stacks
- Ernest Wu
- Jordi Sune
- et al.
- 2011
- IRPS 2011
Towards a viable TDDB reliability assessment methodology: From breakdown physics to circuit failure
- Ernest Y. Wu
- Jordi Suné
- 2009
- IPFA 2009
Recommended Methods to Study Resistive Switching Devices
- Mario Lanza
- H.-S. Philip Wong
- et al.
- 2018
- Advanced Electronic Materials
Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics