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Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-LineRuben Hamming GreenSaketh Ram Mamidalaet al.2024EDTM 2024
Advancements in Memristor Device Development: From Material Stack Optimization to Physical ModellingValeria BragagliaDonato Francesco Falconeet al.2024B-MRS 2024
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO๐ฅ ReRAM DevicesDavide LombardoSaketh Ram Mamidalaet al.2024DRC 2024