First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
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5 results for Guohan Hu
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
- Guohan Hu
- Jonathan Sun
- et al.
- 2021
- IEDM 2021
Spin transmission through NiO in Pt/NiO/NM/Py heterostructure
- Biswajit Sahoo
- Christopher Safranski
- et al.
- 2024
- MMM 2024
Easy plane magnetic tunnel junction as an entropy source for computing
- Jonathan Sun
- Christopher Safranski
- et al.
- 2023
- MMM 2023
Spin-Transfer Torque Magnetoresistive Random Access Memory Technology Status and Future Directions
- Daniel Worledge
- Guohan Hu
- 2024
- Nat. Rev. Electr. Eng.