Subtractive Ru Interconnect Enabled by Novel Patterning Solution for EUV Double Patterning and TopVia with Embedded Airgap Integration for Post Cu Interconnect ScalingC. J. PennyKoichi Motoyamaet al.2022IEDM 2022
A novel integration scheme for self-aligend Ru topvia as post-Cu alternative metal interconnectsK. MotoyamaD. Metzleret al.2023IITC/MAM 2023
EUV single exposure via patterning at aggressive pitchJing GuoJennifer Churchet al.2021SPIE Advanced Lithography 2021
Particle reduction in back end of line plasma-etching process: CFM: Contamination free manufacturingLijuan ZouAlex Vagheseet al.2018ASMC 2018