Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic TechnologiesM. BhuiyanM. Kimet al.2021IEDM 2021
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET StructureJuntao LiShogo Mochizukiet al.2022ISTFA 2022
Comparison of CO and CO2rf plasma treatment of SnO2nanoparticles for gas sensing materialsKimberly A. M. HiyotoErin P. Stuckertet al.2021JVSTA