Thermal oxidation of Cu interconnects capped with CoWP
- J.P. Gambino
- S. Smith
- et al.
- 2005
- MRS Spring Meeting 2005
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10 results for S. Smith
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Stress migration lifetime for Cu interconnects with CoWP-only cap
- Jeffrey P. Gambino
- Christy L. Johnson
- et al.
- 2006
- IEEE T-DMR
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process
- J.P. Gambino
- J. Wynne
- et al.
- 2005
- IITC 2005
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
A study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN, or SiC xN yH z
- C.-K. Hu
- D. Canaperi
- et al.
- 2003
- AMC 2003
Atom motion of Cu and Co in Cu damascene lines with a CoWP cap
- C.-K. Hu
- L. Gignac
- et al.
- 2004
- Applied Physics Letters