Physical limits to VLSI technology using silicon MOSFET's
- Robert H. Dennard
- 1983
- Physica B+C
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80 results for Robert Dennard
Alpha-Particle-Induced Soft Error Rate in VLSI Circuits
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1982
- IEEE Journal of Solid-State Circuits
IIA-1 Generalized Scaling Theory and its Application to a 1/4 Micron Mosfet Design
- G. Baccarani
- M.R. Wordeman
- et al.
- 1982
- IEEE T-ED
Alpha-Particle-Induced Soft Error Rate in VLSI Circuits
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1982
- IEEE T-ED
A 34 µ m2 DRAM Cell Fabricated with a 1 µm Single-Level Polycide FET Technology
- Hu H. Chao
- Robert H. Dennard
- et al.
- 1981
- IEEE Journal of Solid-State Circuits
A hardened field insulator
- G.J. Hu
- J.M. Aitken
- et al.
- 1981
- IEEE TNS
Threshold Voltage Characteristics of Depletion-Mode MOSFET's
- Matthew R. Wordeman
- Robert H. Dennard
- 1981
- IEEE T-ED
1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part 11—Device Designs and Characteristics for High-Performance Logic Applications
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1979
- IEEE T-ED
MA-4 the Evolution of MOS Technology Toward VLSI
- R.H. Dennard
- 1979
- IEEE T-ED