A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
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Vertically self-aligned buried junction formation for ultrahigh-density DRAM applications
- J. Beintner
- Y. Li
- et al.
- 2004
- IEEE Electron Device Letters