Analysis of BTI, SHE Induced BTI and HCD under Full VG/VD Space in GAA Nano-Sheet N and P FETsNilotpal ChoudhuryUma Sharmaet al.2020IRPS 2020
On the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETsNarendra PariharUma Sharmaet al.2019IRPS 2019
Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETsNarendra PariharRichard G. Southwicket al.2017IRPS 2017
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditionsNarendra PariharUma Sharmaet al.2018IEEE T-ED