Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window
- Zhouhang Jiang
- Yi Xiao
- et al.
- 2022
- VLSI Technology and Circuits 2022
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4 results for Y.S. Chauhan
Evaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFET
- R. Singh
- K. Aditya
- et al.
- 2018
- IEEE Electron Device Letters
RF SOI switch FET design and modeling tradeoffs for GSM applications
- Shyam Parthasarathy
- Amit Trivedi
- et al.
- 2010
- VLSID/Embedded 2010
Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
- Dimitrios Tsamados
- Yogesh Singh Chauhan
- et al.
- 2008
- Solid-State Electronics