Trimming of hard-masks by gaseous chemical oxide removal (COR) for sub-10nm gates/fins, for gate length control and for embedded logicWesley C. NatzleDavid Horaket al.2004ASMC 2004
A high performance 0.13 μm copper BEOL technology with low-k dielectricR.D. GoldblattB.N. Agarwalaet al.2000IITC 2000