A 0.168μm 2/0.11μm 2 highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
- G. Wang
- P. Parries
- et al.
- 2005
- VLSI Technology 2005
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Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias
- Toshiaki Kirihata
- John Golz
- et al.
- 2016
- IEEE JESTCS