GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
- Ko-Tao Lee
- Can Bayram
- et al.
- 2017
- IEEE Electron Device Letters
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Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(111) substrate
- J. Perozek
- H.-P. Lee
- et al.
- 2017
- Journal of Physics D: Applied Physics