A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applicationsWin-San KhwaMeng-Fan Changet al.2016ISSCC 2016
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory ApplicationsWin-San KhwaMeng-Fan Changet al.2017IEEE JSSC