Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
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Layout dependence of gate dielectric TDDB in HKMG FinFET technology
- Wen Liu
- Ernest Y. Wu
- et al.
- 2016
- IRPS 2016