High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
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6 results for Alberto Cestero
3Di DC-DC Buck Micro Converter with TSVs, Grind Side Inductors, and Deep Trench Decoupling Capacitors in 32nm SOI CMOS
- J. Safran
- Giri N. K. Rangan
- et al.
- 2016
- ECTC 2016
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
A compact eFUSE programmable array memory for SOI CMOS
- John Safran
- Alan Leslie
- et al.
- 2007
- VLSI Circuits 2007
Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips
- Norm Robson
- John Safran
- et al.
- 2007
- CICC 2007