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In situ resistivity measurement of cobalt silicide formationG. OttavianiK.N. Tuet al.1987Journal of Applied Physics
Electrical transport properties of transition-metal disilicide filmsF. NavaK.N. Tuet al.1987Journal of Applied Physics
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetrationS.E. BabcockK.N. Tu1986Journal of Applied Physics
Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy filmsB.Z. WeissK.N. Tuet al.1986Journal of Applied Physics
Enhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formationT.C. ChouC.Y. Wonget al.1986Applied Physics Letters
Electrical transport properties of V3Si, V5Si3, and VSi2 thin filmsF. NavaO. Bisiet al.1986Physical Review B
Schottky-barrier heights of Ti and TiSi2 on n-type and p-type Si(100)M.O. AboelfotohK.N. Tu1986Physical Review B
Electrical characterization of alloy thin films of VSi2 and V3SiF. NavaO. Bisiet al.1986Thin Solid Films