Ion induced adhesion via interfacial compounds
- J.E.E. Baglin
- A.G. Schrott
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B
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230 results for King-Ning Tu
NiSi2 precipitation in nickel-implanted silicon films
- R.C. Cammarata
- C.V. Thompson
- et al.
- 1987
- Applied Physics Letters
Localized epitaxial growth of ReSi2 on (111) and (001) silicon
- J.J. Chu
- L.J. Chen
- et al.
- 1987
- Journal of Applied Physics
Electrical transport properties of transition-metal disilicide films
- F. Nava
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
Diffusion of oxygen in superconducting YBa2Cu3O 7-δ oxide upon annealing in helium and oxygen ambients
- K.N. Tu
- S.I. Park
- et al.
- 1987
- Applied Physics Letters
In situ resistivity measurement of cobalt silicide formation
- G. Ottaviani
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
Lattice imaging of metastable TiSi2
- T.C. Chou
- C.Y. Wong
- et al.
- 1987
- Journal of Applied Physics
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration
- S.E. Babcock
- K.N. Tu
- 1986
- Journal of Applied Physics
Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films
- B.Z. Weiss
- K.N. Tu
- et al.
- 1986
- Journal of Applied Physics
Enhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formation
- T.C. Chou
- C.Y. Wong
- et al.
- 1986
- Applied Physics Letters