Diffusion of oxygen in superconducting YBa2Cu3O 7-δ oxide upon annealing in helium and oxygen ambientsK.N. TuS.I. Parket al.1987Applied Physics Letters
Application of direct and indirect methods to the study of crystallization of amorphous Cr5Si3B.Z. WeissK.N. Tuet al.1987Scripta Metallurgica
NiSi2 precipitation in nickel-implanted silicon filmsR.C. CammarataC.V. Thompsonet al.1987Applied Physics Letters
Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy filmsB.Z. WeissK.N. Tuet al.1986Journal of Applied Physics
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetrationS.E. BabcockK.N. Tu1986Journal of Applied Physics
Enhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formationT.C. ChouC.Y. Wonget al.1986Applied Physics Letters
Electrical transport properties of V3Si, V5Si3, and VSi2 thin filmsF. NavaO. Bisiet al.1986Physical Review B
Schottky-barrier heights of Ti and TiSi2 on n-type and p-type Si(100)M.O. AboelfotohK.N. Tu1986Physical Review B