Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%
- John Hart
- Thomas Adam
- et al.
- 2016
- Journal of Applied Physics
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51 results for Alexander Reznicek
Optical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001)
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2014
- JVSTB
Effects of stress on the dielectric function of strained pseudomorphic Si 1-xGe x alloys from 0 to 75 Ge grown on Si (001)
- Gangadhara Raja Muthinti
- Manasa Medikonda
- et al.
- 2012
- Journal of Applied Physics
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si 1-xC x films
- Thomas Adam
- Nicolas Loubet
- et al.
- 2012
- Thin Solid Films
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
- Hong He
- Paul Brabant
- et al.
- 2012
- Thin Solid Films
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
Strain and lattice engineering for Ge FET devices
- S.W. Bedell
- A. Reznicek
- et al.
- 2006
- Materials Science in Semiconductor Processing
Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2005
- Applied Physics Letters