Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
- Rajan K. Pandey
- Kota V. R. M. Murali
- et al.
- 2010
- IEEE T-ED
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13 results for Stephen S. Furkay
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)
The use of simulation in semiconductor technology development
- D.C. Cole
- E.M. Buturla
- et al.
- 1990
- Solid State Electronics