Induced e-beam charge impact on spatial orientation of gate-All-Around silicon wires device fabricated on boron nitride substrate
- Shimon Levi
- Konstantin Chirko
- et al.
- 2015
- SPIE Advanced Lithography 2015
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4 results for Ofer Adan
CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer
- Guy M. Cohen
- Leathen Shi
- et al.
- 2014
- ASMC 2014
CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires
- Shimon Levi
- Ishai Schwarzband
- et al.
- 2014
- SPIE Advanced Lithography 2014
Buckling characterization of gate all around silicon nanowires
- Shimon Levi
- Ishai Schwarzband
- et al.
- 2013
- SPIE Advanced Lithography 2013