Backside power distribution for nanosheet technologies beyond 2nmRuilong XieWonhyuk Honget al.2024VLSI Technology and Circuits 2024
D2W and W2W Hybrid bonding system with below 2.5 micron pitch for 3D chiplet AI applicationsKatsuyuki SakumaRoy Yuet al.2024IEDM 2024
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around TransistorsCurtis DurfeeSubhadeep Kalet al.2021ECS Meeting 2021