Interface state density of single vertical nanowire MOS capacitors
- Philipp Mensch
- Kirsten E. Moselund
- et al.
- 2013
- IEEE TNANO
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159 results for Heike Riel
Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: Towards monolithic integration of nano-devices
- Pratyush Das Kanungo
- Heinz Schmid
- et al.
- 2013
- Nanotechnology
Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain
- Giorgio Signorello
- Siegfried Karg
- et al.
- 2013
- Nano Letters
Measurement of thermoelectric properties of single semiconductor nanowires
- Siegfried Karg
- Philipp Mensch
- et al.
- 2013
- Journal of Electronic Materials
Nanoscale origin of defects at metal/molecule engineered interfaces
- Peter N. Nirmalraj
- Heinz Schmid
- et al.
- 2013
- Langmuir
Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy
- D.L. Dheeraj
- A.M. Munshi
- et al.
- 2013
- Journal of Crystal Growth
In situ doping of catalyst-free InAs nanowires
- Hesham Ghoneim
- Philipp Mensch
- et al.
- 2012
- Nanotechnology
Bonding and electronic transport properties of fullerene and fullerene derivatives in break-junction geometries
- Emanuel Lörtscher
- Victor Geskin
- et al.
- 2012
- Small
Tuning of electrical and optical properties of organic LEDs using combinatorial device fabrication
- T.A. Beierlein
- H. Riel
- et al.
- 2012
- Journal of the Society for Information Display
InAs nanowire growth on oxide-masked 〈111〉 silicon
- Mikael T. Björk
- Heinz Schmid
- et al.
- 2012
- Journal of Crystal Growth