State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
- Michelle Cheng
- Zhi-Lun Liu
- et al.
- 2024
- VLSI Technology and Circuits 2024
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4 results for Alexander Grun
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- Michelle Cheng
- Alexander Grun
- et al.
- 2022
- IEDM 2022
Materials Design of Phase Change Memory for Analog In- Memory Computing Applications
- Michelle Cheng
- Zhi-Lun Liu
- et al.
- 2024
- MRS Fall Meeting 2024
1T1R mushroom PCM cell device using epitaxial GeSbTe
- Guy Cohen
- Amlan Majumdar
- et al.
- 2023
- E\PCOS 2023