High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
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100 results for Steven J. Koester
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters
Determination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
- S.J. Koester
- B.-U. Klepser
- et al.
- 1998
- DRC 1998
Negative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well
- S.J. Koester
- K. Ismail
- et al.
- 1997
- IEEE Electron Device Letters
Novel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor
- S.J. Koester
- K. Ismail
- et al.
- 1997
- DRC 1997
Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Electrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
Weak localization in back-gated S quantum-well wires fabricated by reactive ion etching
- S.J. Koester
- K. Ismail
- et al.
- 1996
- Physical Review B - CMMP