Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
- Sonal Dey
- Kai-Hung Yu
- et al.
- 2017
- JVSTA
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15 results for Steven Consiglio
Electrical enhancement and higher-k engineering in ultra-thin atomic layer deposited Hf1-xAlxOy films
- K. Tapily
- S. Consiglio
- et al.
- 2014
- ECS J. Solid State Sci. Technol.
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
- Steven Consiglio
- Kandabara Tapily
- et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf 1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme
- Relja Vasić
- Steven Consiglio
- et al.
- 2013
- Journal of Applied Physics
Electrical properties of ultrathin Al2O3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
- Spyridon Skordas
- Filippos Papadatos
- et al.
- 2005
- Journal of Materials Research