Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
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71 results for Chiara Marchiori
Electro-optical properties of barium titanate films epitaxially grown on silicon
- Stefan Abel
- Daniele Caimi
- et al.
- 2012
- SPIE OPTO 2012
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Self-aligned S/D regions for InGaAs MOSFETs
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2011
- ESSDERC 2011
Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
- Martin M. Frank
- Chiara Marchiori
- et al.
- 2011
- Microelectronic Engineering
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
Epitaxial SrO interfacial layers for HfO2 -Si gate stack scaling
- Chiara Marchiori
- Martin M. Frank
- et al.
- 2011
- Applied Physics Letters